By R. K. Willardson,Richard A. Kiehl,T. C.L. Gerhard Sollner
- The first whole assessment of InP-based HFETs and complementary HFETs, which promise very low strength and excessive speed
- Offers a whole, three-chapter overview of resonant tunneling
- Provides an emphasis on circuits in addition to devices
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High Speed Heterostructure Devices: 41 (Semiconductors and Semimetals) by R. K. Willardson,Richard A. Kiehl,T. C.L. Gerhard Sollner