By Vassil Palankovski,Rüdiger Quay
The subject of this monograph is the actual modeling of heterostructure units. an in depth dialogue of actual versions and parameters for compound semiconductors is gifted together with the appropriate features of recent submicron heterostructure units. greater than 25 simulation examples for various varieties of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and excessive electron mobility transistors (HEMTs) are given compared to experimental facts from cutting-edge devices.
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Analysis and Simulation of Heterostructure Devices (Computational Microelectronics) by Vassil Palankovski,Rüdiger Quay